tsc5302d high voltage npn transistor with diode 1 / 6 version: g14 to - 251 (ipak) to - 252 (dpak) features build - in free - wheeling diode makes efficient anti - saturation operation no need to interest h fe value because of low variable storage - time spread even though comer spirit product. low base d rive requirement suitable for half bridge light ballast application structure silicon triple diffused type npn silicon transistor with diode ordering information part no. package packing tsc5302dcp rog to - 252 2.5 k pcs / 13 reel tsc5302dch c5g to - 251 7 5 pcs / tube note: g denote for halogen free product absolute maximum rating s ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit collector - base voltage v cbo 700 v collector - emitter voltage v ceo 400 v emitter - base voltage v ebo 10 v collec tor current i c 2 a collector peak current (tp <5ms) i cm 4 a base current i b 1 a base peak current (tp <5ms) i bm 2 a total dissipation @ tc 25 o c to - 251 p tot 1.5 w to - 252 25 maximum operating junction temperature t j +150 o c storage temperature range t stg - 65 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r? jc 6.25 o c/w junction to ambi ent thermal resistance r? ja 100 o c/w block diagram pin definition : 1. base 2. collector 3. emitter product summary bv ceo 400v bv cbo 7 00v i c 2a v ce(sat) 1.1v @ i c = 1a, i b = 0.25a
tsc5302d high voltage npn transistor with diode 2 / 6 version: g14 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static collector - base voltage i c = 1ma, i b = 0 bv cbo 700 -- -- v collector - emitter breakdown voltage a i c = 10ma, i e = 0 bv ceo 400 -- -- v emitter - base breakdown voltage i e = 1ma, i c = 0 bv ebo 10 -- -- v collector cutoff current v cb = 700v, i e = 0 i cbo -- -- 1 a emitter cutoff current v eb = 9v, i c = 0 i ebo -- -- 1 a collector - emitter saturation voltage a i c =0.5a , i b = 0.1a v ce(sat)1 -- -- 0.5 v i c =1a , i b = 0. 2 5a v ce(sat)2 -- 1.1 1. 5 base - emitter saturation voltage a i c =0.5a , i b = 0.1a v be(sat)1 -- -- 1.1 v i c =1a , i b = 0.2 5 a v be(sat)2 -- -- 1. 2 dc current gain v ce = 5v, i c = 10ma h fe 1 10 -- -- v ce = 5v, i c = 400ma h fe 2 10 -- 30 v ce = 5v, i c = 1a h fe 3 5 -- -- turn on time v cc = 25 0 v, i c = 1a, i b1 = i b2 = 0.2a, t p =25s duty cycle<1% t on -- 0.15 0.3 s storage time t stg -- 0.5 0.9 s fall time t f -- 0.2 0.4 s diode fall time i c = 1a t f -- -- 800 s forward voltage drop i c = 1a v f -- -- 1.4 v notes: pulsed d uration = 300 s , duty cycle 2%
tsc5302d high voltage npn transistor with diode 3 / 6 version: g14 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) figure 1. static characteri sti c s figure 2. dc current gain figure 3. vce(sat) v s. vbe(sat) figure 4. power derating figure 5 . reverse bias soa figure 6. safe operating area
tsc5302d high voltage npn transistor with diode 4 / 6 version: g14 unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsc5302d high voltage npn transistor with diode 5 / 6 version: g14 unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsc5302d high voltage npn transistor with diode 6 / 6 version: g14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information cont ained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liab ility whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages res ulting from such improper use or sale.
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